When Friday morning of SPIE week rolls around, it feels like my brain is completely full. Even the half-day of conference left seems too long. In the Optical Lithography conference, Friday morning is traditionally the “tool” session, and the first tree talks were by Nikon, Canon and ASML giving their roadmap status reports. While the topics were interesting, I found myself fascinated instead with a different lesson they were teaching me: How to Lie with Graphs. Much of the data was of the sort to show how some parameter was either very high (uptime), or very low (overlay error), or very stable (immersion fluid temperature). To “enhance” the desired impression of high, low, or unchanging, the range used for the y-axes of graphs can be properly manipulated. So, if defect densities range from 0.05 to 0.11 per square centimeter, make the graph go from 0 to 0.3. Thus, all the number seem low. For uptime, with numbers ranging from 85% to 95%, make the graph got from 0 to 100 so that all the results seem high (you can also use a bar chart so it is not as obvious that the bottom 80% of the graph is unused). But my favorite is the CD uniformity wafer contour plot. If the data has a mean of 40 nm and a three sigma of 2 nm, make the contour range go from 32 nm to 48 nm so that only two or three contour colors are actually used, making the wafer data seem smooth as silk. Common guys – you should know better than that.
I am glad that I stay through most of the morning, though, because I saw my favorite paper of the conference. Lieve Van Look of Imec gave a great talk on matching scanners to enable their use for a given OPC’ed mask. A tremendous amount of work was shown, with clear analysis and well supported conclusions. Good work.